u‰‰ŽาF Etienne Bustarret ŽiCNRS-LEPES, Grenoble Francej
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‘่–ฺF uSuperconducting B-doped diamond and related materials : recent progressv

—vŽ|F
After describing the main physico-chemical features of B-doped single
crystal homoepitaxial diamond layers grown by MPCVD on {001}- and
{111}-oriented Ib diamond substrates, we show by low T scanning tunnel
spectroscopy that the superconducting gap and its T dependence are
fully compatible with a BCS-type description. We then investigate the
vortex properties of this gdirtyh superconductor and finally discuss
the doping-induced softening of the optical modes along {100} and {110}.
By analogy with diamond, we then explored the ultra-low temperature
transport properties of another B-doped column IV semiconductor. The
first positive results of this study are presented, and their possible
influence on the design of future hybrid devices is discussed. 

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